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Power F-MOS FETs
2SK3047
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = 30V guaranteed q High-speed switching: tf = 25ns q No secondary breakdown
unit: mm
9.90.3 4.60.2 2.90.2
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
15.00.5
3.20.1
13.70.2 4.20.2
1.40.2 1.60.2 0.80.1
3.00.5
2.60.1
0.550.15
s Absolute Maximum Ratings (TC = 25C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 30 2 4 15 30 2 150 -55 to +150 Unit V V A A mJ W C C
1 2
2.540.3 3 5.080.5
1: Gate 2: Drain 3: Source TO-220D Package
Avalanche energy capacity Allowable power dissipation Channel temperature Storage temperature
*
TC = 25C Ta = 25C
L = 5mH, IL = 2.45A, VDD = 50V, 1 pulse
s Electrical Characteristics (TC = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Drain to Source breakdown voltage Gate threshold voltage Drain to Source ON-resistance Forward transfer admittance Diode forward voltage Symbol IDSS IGSS VDSS Vth RDS(on) | Yfs | VDSF Coss td(on) tr td(off) tf VGS = 10V, ID = 1A VDD = 200V, RL = 200 Conditions VDS = 640V, VGS = 0 VGS = 30V, VDS = 0 ID = 1mA, VGS = 0 VDS = 25V, ID = 1mA VGS = 10V, ID = 1A VDS = 25V, ID = 1A IDR = 2A, VGS = 0 350 VDS = 20V, VGS = 0, f = 1MHz 60 25 15 20 60 25 0.7 800 2 4.8 1.1 -1.3 5 7 min typ max 0.1 1 Unit mA A V V S V pF pF pF ns ns ns ns
Input capacitance (Common Source) Ciss Output capacitance (Common Source) Reverse transfer capacitance (Common Source) Crss Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time
1
Power F-MOS FETs
Area of safe operation (ASO)
100 30 10 t =10s 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 100s 1ms DC 10ms 100ms 60
2SK3047
PD Ta
30
EAS Tj
Avalanche energy capacity EAS (mJ)
VDD=50V ID=2A 25
Allowable power dissipation PD (W)
Non repetitive pulse TC=25C
(1) TC=Ta (2) Without heat sink 50
Drain current ID (A)
40
20
30 (1) 20
15
10
10 (2) 0 0 20 40 60 80 100 120 140 160
5
0 25
50
75
100
125
150
175
Drain to source voltage VDS (V)
Ambient temperature Ta (C)
Junction temperature Tj (C)
ID VDS
4 TC=25C VGS=15V 4 5
ID VGS
6 VDS=25V
Vth TC
VDS=25V ID=1mA 5
Drain current ID (A)
Drain current ID (A)
3
10V
Gate threshold voltage Vth (V)
10 12
TC=0C 25C 100C 125C
4
7V 2 6.5V 6V 1 5.5V 5V 0 0 10 20 30 40 50 60
3
3
2
2
1
1
0 0 2 4 6 8
0 0 25 50 75 100 125 150
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
Case temperature TC (C)
RDS(on) ID
Drain to source ON-resistance RDS(on) ()
12 2.0
| Yfs | ID
Forward transfer admittance |Yfs| (S)
VDS=25V TC=25C
Ciss, Coss, Crss VDS
Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
10000 f=1MHz TC=25C
10
1.5
1000 Ciss
8 VGS=10V 15V 4
6
1.0
100 Coss
0.5
10
Crss
2
0 0 1 2 3 4 5
0 0 1 2 3 4
1 0 50 100 150 200
Drain current ID (A)
Drain current ID (A)
Drain to source voltage VDS (V)
2
Power F-MOS FETs
VDS, VGS Qg
800 16 14 12 10 VDS VGS 8 6 4 2 0 24 120 ID=2A TC=25C
2SK3047
td(on), tr, tf, td(off) ID
VDD=200V VGS=10V TC=25C
Drain to source voltage VDS (V)
Gate to source voltage VGS (V)
700 600 500 400 300 200 100 0 0 4 8 12 16
Switching time td(on),tr,tf,td(off) (ns)
100
80
60
td(off)
40 tf tr 20 td(on)
0 0 0.5 1.0 1.5 2.0 2.5
20
Gate charge amount Qg (nC)
Drain current ID (A)
Rth(t) t
102 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1)
Thermal resistance Rth(t) (C/W)
10
(2)
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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